TSPF5400 vishay semiconductors 1 (5) rev. 2, 20-may-99 www.vishay.com document number 81038 high speed ir emitting diode in 5 mm (t1 ) package description TSPF5400 is a high speed infrared emitting diode in gaalas on gaalas double hetero (dh) technology, molded in a clear, untinted plastic package. the new technology combines the high speed of dh gaalas with the efficiency of standard gaalas and the low forward voltage of the standard gaas technology. features high modulation bandwidth (10 mhz) extra high radiant power and radiant intensity low forward voltage standard t1 ( 5 mm) package angle of half intensity j = 24 peak wavelength p = 870 nm high reliability good spectral matching to si photodetectors 94 8390 applications infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements. TSPF5400 is ideal for the design of transmission systems and for carrier frequency based systems (e.g. ask / fsk coded, 450 khz or 1.3 mhz). absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit reverse voltage v r 5 v forward current i f 100 ma surge forward current t p = 100 s i fsm 200 ma power dissipation p v 210 mw junction temperature t j 100 c operating temperature range t amb 40...+100 c storage temperature range t stg 40...+100 c soldering temperature t 5sec, 2 mm from case t sd 260 c thermal resistance junction/ambient r thja 350 k/w
TSPF5400 vishay semiconductors 2 (5) rev. 2, 20-may-99 www.vishay.com document number 81038 basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.5 1.8 v g i f = 200 ma, t p = 100 s v f 1.8 2.1 v temp. coefficient of v f i f = 100ma tk vf 1.7 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 160 pf radiant intensity i f = 100 ma, t p = 20 ms i e 30 45 mw/sr radiant power i f = 100 ma, t p = 20 ms e 40 mw temp. coefficient of e i f = 100 ma tk e 0.7 %/k angle of half intensity j 24 deg peak wavelength i f = 100 ma p 870 nm spectral bandwidth i f = 100 ma 50 nm temp. coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 30 ns fall time i f = 100 ma t f 30 ns typical characteristics (t amb = 25 c unless otherwise specified) 020406080 0 50 100 150 200 250 p power dissipation ( mw ) v t amb ambient temperature ( c ) 100 94 7957 e r thja figure 1. power dissipation vs. ambient temperature 020406080 0 50 100 150 200 250 i forward current ( ma ) f t amb ambient temperature ( c ) 100 94 8879 r thja figure 2. forward current vs. ambient temperature
TSPF5400 vishay semiconductors 3 (5) rev. 2, 20-may-99 www.vishay.com document number 81038 012 3 v f forward voltage ( v ) 4 96 12169 10 1 10 0 10 2 10 3 10 4 i forward current ( ma ) f figure 3. forward current vs. forward voltage 020406080 0.7 0.8 0.9 1.0 1.1 1.2 v relative forward voltage frel t amb ambient temperature ( c ) 100 94 7990 e i f = 10 ma figure 4. relative forward voltage vs. ambient temperature 96 12170 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i f forward current ( ma ) i radiant intensity ( mw/sr ) e figure 5. radiant intensity vs. forward current radiant power ( mw ) e i f forward current ( ma ) 96 12171 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 figure 6. radiant power vs. forward current 10 10 50 0 100 0 0.4 0.8 1.2 1.6 i / e rel e rel t amb ambient temperature ( c ) 140 94 8882 figure 7. rel. radiant intensity\power vs. ambient temperature 780 880 wavelength ( nm ) 980 95 9886 radiant power ( mw ) e 0 0.25 0.5 0.75 1.0 1.25 figure 8. relative radiant power vs. wavelength
TSPF5400 vishay semiconductors 4 (5) rev. 2, 20-may-99 www.vishay.com document number 81038 0.4 0.2 0 0.2 0.4 i relative radiant intensity e rel 0.6 94 8883 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 figure 9. relative radiant intensity vs. angular displacement dimensions in mm 96 12122
TSPF5400 vishay semiconductors 5 (5) rev. 2, 20-may-99 www.vishay.com document number 81038 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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